New resist materials based on polyacetal main chain scission

Theodoros Manouras; Antonis Olziersky; Panagiotis Argitis

doi:10.1117/12.2230398

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21 March 2016 New resist materials based on polyacetal main chain scission

Theodoros Manouras, Antonis Olziersky, Panagiotis Argitis

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Proceedings Volume 9779, Advances in Patterning Materials and Processes XXXIII; 97791P (2016) https://doi.org/10.1117/12.2230398
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The main target of the current work was to develop new polymeric materials for lithographic applications, the main chain of which is cleaved under the influence of photogenerated acid. Acetals have been chosen as functional groups in the main polymer chain since they can be cleaved in the presence of an acid while they remain untouched in alkaline ambient. The synthesized polymers were designed to bear in addition suitable functional groups for the achievement of desirable lithographic characteristics (thermal stability, acceptable glass transition temperature, etch resistance, proper dissolution behaviour). The synthesis was carried out via polyaddition of a vinyloxyl compound and a diol compound to produce novel polymers with acetal repeating units in their backbone. We chose polyaromatic hydrocarbons as diol units to achieve increased etch resistance. In addition, the polyaromatic units allow exposure at 193 nm as well, where the absorption of simple aromatics is prohibitively high. Good solubility and increased surface adhesion were achieved by choosing cycloaliphatic vinyloxyl ethers as the second component for the polyaddition. In addition, the same route can be followed to incorporate chromophores that can tune the resist absorbance in different spectral regions. Furthermore, single component systems can be designed following this approach by the incorporation of suitable PAGs in the main chain.

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Theodoros Manouras, Antonis Olziersky, and Panagiotis Argitis "New resist materials based on polyacetal main chain scission", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 97791P (21 March 2016); https://doi.org/10.1117/12.2230398

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