25 March 2016 Chemical trimming overcoat: an enhancing composition and process for 193nm lithography
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Abstract
As the critical dimension of devices is approaching the resolution limit of 193nm photo lithography, multiple patterning processes have been developed to print smaller CD and pitch. Multiple patterning and other advanced lithographic processes often require the formation of isolated features such as lines or posts by direct lithographic printing. The formation of isolated features with an acceptable process window, however, can pose a challenge as a result of poor aerial image contrast at defocus. Herein we report a novel Chemical Trimming Overcoat (CTO) as an extra step after lithography that allows us to achieve smaller feature size and better process window.
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Cong Liu, Cong Liu, Kevin Rowell, Kevin Rowell, Lori Joesten, Lori Joesten, Paul Baranowski, Paul Baranowski, Irvinder Kaur, Irvinder Kaur, Wanyi Huang, Wanyi Huang, JoAnne Leonard, JoAnne Leonard, Hae-Mi Jeong, Hae-Mi Jeong, Kwang-Hwyi Im, Kwang-Hwyi Im, Tom Estelle, Tom Estelle, Charlotte Cutler, Charlotte Cutler, Gerd Pohlers, Gerd Pohlers, Wenyan Yin, Wenyan Yin, Patricia Fallon, Patricia Fallon, Mingqi Li, Mingqi Li, Hyun Jeon, Hyun Jeon, Cheng Bai Xu, Cheng Bai Xu, Pete Trefonas, Pete Trefonas, } "Chemical trimming overcoat: an enhancing composition and process for 193nm lithography", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 97791Y (25 March 2016); doi: 10.1117/12.2219688; https://doi.org/10.1117/12.2219688
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