Paper
25 March 2016 Spin-on-carbon hard masks utilising fullerene derivatives
Alan G. Brown, Andreas Frommhold, Tom Lada, J. Bowen, Z. el Otell, Alex P. G. Robinson
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Abstract
We have developed a range of fullerene containing materials for use as organic hard masks. Recent advances in material development are reported together with some results from external evaluations of the original HM100 series. Initial results for the new HM340-383-010 formulation show it to have a high thermal stability (~5.5 % mass loss at 400°C) and a very high carbon content (at 95.3%), offering high etch durability.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan G. Brown, Andreas Frommhold, Tom Lada, J. Bowen, Z. el Otell, and Alex P. G. Robinson "Spin-on-carbon hard masks utilising fullerene derivatives", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 977927 (25 March 2016); https://doi.org/10.1117/12.2219212
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Etching

Photomasks

Carbon

Fullerenes

Resistance

Silicon

Plasma etching

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