In this presentation I will discuss some of the ways that these contributors can be measured, modeled and corrected as part of a Holistic Lithography methodology. Multiple-patterning techniques can be combined with EUV lithography to continue Moore’s law down to final pattern dimensions of 5-6 nm half pitch.
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Chris Spence, "Computational process modeling and correction in a multi-patterning era," Proc. SPIE 9780, Optical Microlithography XXIX, 978005 (15 March 2016);