CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 9780 > Article
Paper
1 April 2016 Lithographic qualification of high-transmission mask blank for 10nm node and beyond
Yongan Xu, Tom Faure, Ramya Viswanathan, Granger Lobb, Richard Wistrom, Sean Burns, Lin Hu, Ioana Graur, Ben Bleiman, Dan Fischer, Yann Mignot, Yoshifumi Sakamoto, Yusuke Toda, John Bolton, Todd Bailey, Nelson Felix, John Arnold, Matthew Colburn
Author Affiliations +
Proceedings Volume 9780, Optical Microlithography XXIX; 978006 (2016) https://doi.org/10.1117/12.2219778
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States
Abstract
In this paper, we discuss the lithographic qualification of high transmission (High T) mask for Via and contact hole applications in 10nm node and beyond. First, the simulated MEEF and depth of focus (DoF) data are compared between the 6% and High T attnPSM masks with the transmission of High T mask blank varying from 12% to 20%. The 12% High T blank shows significantly better MEEF and larger DoF than those of 6% attnPSM mask blank, which are consistent with our wafer data. However, the simulations show no obvious advantage in MEEF and DoF when the blank transmittance is larger than 12%. From our wafer data, it has been seen that the common process window from High T mask is 40nm bigger than that from the 6% attnPSM mask. In the elongated bar structure with smaller aspect ratio, 1.26, the 12% High T mask shows significantly less develop CD pull back in the major direction. Compared to the High T mask, the optimized new illumination condition for 6% attnPSM shows limited improvement in MEEF and the DoF through pitch. In addition, by using the High T mask blank, we have also investigated the SRAF printing, side lobe printing and the resist profile through cross sections, and no patterning risk has been found for manufacturing. As part of this work new 12% High T mask blank materials and processes were developed, and a brief overview of key mask technology development results have been shared. Overall, it is concluded that the High T mask, 12% transmission, provides the most robust and extendable lithographic solution for 10nm node and beyond.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Yongan Xu, Tom Faure, Ramya Viswanathan, Granger Lobb, Richard Wistrom, Sean Burns, Lin Hu, Ioana Graur, Ben Bleiman, Dan Fischer, Yann Mignot, Yoshifumi Sakamoto, Yusuke Toda, John Bolton, Todd Bailey, Nelson Felix, John Arnold, and Matthew Colburn "Lithographic qualification of high-transmission mask blank for 10nm node and beyond", Proc. SPIE 9780, Optical Microlithography XXIX, 978006 (1 April 2016); https://doi.org/10.1117/12.2219778
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 14 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks
Semiconducting wafers
Optical proximity correction
Lithography
Resolution enhancement technologies
Transmittance
Printing
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top