1 April 2016 Lithographic qualification of high-transmission mask blank for 10nm node and beyond
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In this paper, we discuss the lithographic qualification of high transmission (High T) mask for Via and contact hole applications in 10nm node and beyond. First, the simulated MEEF and depth of focus (DoF) data are compared between the 6% and High T attnPSM masks with the transmission of High T mask blank varying from 12% to 20%. The 12% High T blank shows significantly better MEEF and larger DoF than those of 6% attnPSM mask blank, which are consistent with our wafer data. However, the simulations show no obvious advantage in MEEF and DoF when the blank transmittance is larger than 12%. From our wafer data, it has been seen that the common process window from High T mask is 40nm bigger than that from the 6% attnPSM mask. In the elongated bar structure with smaller aspect ratio, 1.26, the 12% High T mask shows significantly less develop CD pull back in the major direction. Compared to the High T mask, the optimized new illumination condition for 6% attnPSM shows limited improvement in MEEF and the DoF through pitch. In addition, by using the High T mask blank, we have also investigated the SRAF printing, side lobe printing and the resist profile through cross sections, and no patterning risk has been found for manufacturing. As part of this work new 12% High T mask blank materials and processes were developed, and a brief overview of key mask technology development results have been shared. Overall, it is concluded that the High T mask, 12% transmission, provides the most robust and extendable lithographic solution for 10nm node and beyond.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongan Xu, Yongan Xu, Tom Faure, Tom Faure, Ramya Viswanathan, Ramya Viswanathan, Granger Lobb, Granger Lobb, Richard Wistrom, Richard Wistrom, Sean Burns, Sean Burns, Lin Hu, Lin Hu, Ioana Graur, Ioana Graur, Ben Bleiman, Ben Bleiman, Dan Fischer, Dan Fischer, Yann Mignot, Yann Mignot, Yoshifumi Sakamoto, Yoshifumi Sakamoto, Yusuke Toda, Yusuke Toda, John Bolton, John Bolton, Todd Bailey, Todd Bailey, Nelson Felix, Nelson Felix, John Arnold, John Arnold, Matthew Colburn, Matthew Colburn, "Lithographic qualification of high-transmission mask blank for 10nm node and beyond", Proc. SPIE 9780, Optical Microlithography XXIX, 978006 (1 April 2016); doi: 10.1117/12.2219778; https://doi.org/10.1117/12.2219778


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