23 March 2016 An integrated source/mask/DSA optimization approach
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Abstract
The introduction of DSA for lithography is still obstructed by a number of technical issues including the lack of a comprehensive computational platform. This work presents a direct source/mask/DSA optimization (SMDSAO) method, which incorporates standard lithographic metrics and figures of merit such as the maximization of process windows. The procedure is demonstrated for a contact doubling example, assuming grapho-epitaxy-DSA. To retain a feasible runtime, a geometry-based Interface Hamiltonian DSA model is employed. The feasibility of this approach is demonstrated through several results and their comparison with more rigorous DSA models.
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Tim Fühner, Tim Fühner, Przemysław Michalak, Przemysław Michalak, Ulrich Welling, Ulrich Welling, Juan Carlos Orozco-Rey, Juan Carlos Orozco-Rey, Marcus Müller, Marcus Müller, Andreas Erdmann, Andreas Erdmann, "An integrated source/mask/DSA optimization approach", Proc. SPIE 9780, Optical Microlithography XXIX, 97800M (23 March 2016); doi: 10.1117/12.2222170; https://doi.org/10.1117/12.2222170
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