NXT:1980Di immersion scanner for 7nm and 5nm production nodes

Roelof de Graaf; Stefan Weichselbaum; Richard Droste; Matthew McLaren; Bert Koek; Wim de Boeij

doi:10.1117/12.2220589

15 March 2016 NXT:1980Di immersion scanner for 7nm and 5nm production nodes

Roelof de Graaf, Stefan Weichselbaum, Richard Droste, Matthew McLaren, Bert Koek, Wim de Boeij

Proceedings Volume 9780, Optical Microlithography XXIX; 978011 (2016) https://doi.org/10.1117/12.2220589
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Immersion scanners remain the critical lithography workhorses in semiconductor device manufacturing. When progressing towards the 7nm device node for logic and D18 device node for DRAM production, pattern-placement and layer-to-layer overlay requirements keep progressively scaling down and consequently require system improvements in immersion scanners. The on-product-overlay requirements are approaching levels of only a few nanometers, imposing stringent requirements on the scanner tool design in terms of reproducibility, accuracy and stability.

In this paper we report on the performance of the NXT:1980Di immersion scanner. The NXT:1980Di builds upon the NXT:1970Ci, that is widely used for 16nm, 14nm and 10nm high-volume manufacturing. We will discuss the NXT:1980Di system- and sub-system/module enhancements that drive the scanner overlay, focus and productivity performance. Overlay, imaging, focus, productivity and defectivity data will be presented for multiple tools.

To further reduce the on-product overlay system performance, alignment sensor contrast improvements as well as active reticle temperature conditioning are implemented on the NXT:1980Di. Reticle temperature conditioning will reduce reticle heating overlay and the higher contrast alignment sensor will improve alignment robustness for processed alignment targets.

Due to an increased usage of multiple patterning techniques, an increased number of immersion exposures is required. NXT:1980Di scanner design modifications raised productivity levels from 250wph to 275wph. This productivity enhancement provides lower cost of ownership (CoO) for customers using immersion technology.

Citation Download Citation

Roelof de Graaf, Stefan Weichselbaum, Richard Droste, Matthew McLaren, Bert Koek, and Wim de Boeij "NXT:1980Di immersion scanner for 7nm and 5nm production nodes", Proc. SPIE 9780, Optical Microlithography XXIX, 978011 (15 March 2016); https://doi.org/10.1117/12.2220589

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available