Native conflict awared layout decomposition in triple patterning lithography using bin-based library matching method

Xianhua Ke; Hao Jiang; Wen Lv; Shiyuan Liu

doi:10.1117/12.2219144

15 March 2016 Native conflict awared layout decomposition in triple patterning lithography using bin-based library matching method

Xianhua Ke, Hao Jiang, Wen Lv, Shiyuan Liu

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Proceedings Volume 9780, Optical Microlithography XXIX; 97801F (2016) https://doi.org/10.1117/12.2219144
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Triple patterning (TP) lithography becomes a feasible technology for manufacturing as the feature size further scale down to sub 14/10 nm. In TP, a layout is decomposed into three masks followed with exposures and etches/freezing processes respectively. Previous works mostly focus on layout decomposition with minimal conflicts and stitches simultaneously. However, since any existence of native conflict will result in layout re-design/modification and reperforming the time-consuming decomposition, the effective method that can be aware of native conflicts (NCs) in layout is desirable. In this paper, a bin-based library matching method is proposed for NCs detection and layout decomposition. First, a layout is divided into bins and the corresponding conflict graph in each bin is constructed. Then, we match the conflict graph in a prebuilt colored library, and as a result the NCs can be located and highlighted quickly.

Citation Download Citation

Xianhua Ke, Hao Jiang, Wen Lv, and Shiyuan Liu "Native conflict awared layout decomposition in triple patterning lithography using bin-based library matching method", Proc. SPIE 9780, Optical Microlithography XXIX, 97801F (15 March 2016); https://doi.org/10.1117/12.2219144

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KEYWORDS

Lithography

Optical lithography

Double patterning technology

Photomasks

Manufacturing

Current controlled current source

Integrated circuits

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