15 March 2016 Native conflict awared layout decomposition in triple patterning lithography using bin-based library matching method
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Abstract
Triple patterning (TP) lithography becomes a feasible technology for manufacturing as the feature size further scale down to sub 14/10 nm. In TP, a layout is decomposed into three masks followed with exposures and etches/freezing processes respectively. Previous works mostly focus on layout decomposition with minimal conflicts and stitches simultaneously. However, since any existence of native conflict will result in layout re-design/modification and reperforming the time-consuming decomposition, the effective method that can be aware of native conflicts (NCs) in layout is desirable. In this paper, a bin-based library matching method is proposed for NCs detection and layout decomposition. First, a layout is divided into bins and the corresponding conflict graph in each bin is constructed. Then, we match the conflict graph in a prebuilt colored library, and as a result the NCs can be located and highlighted quickly.
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Xianhua Ke, Hao Jiang, Wen Lv, Shiyuan Liu, "Native conflict awared layout decomposition in triple patterning lithography using bin-based library matching method", Proc. SPIE 9780, Optical Microlithography XXIX, 97801F (15 March 2016); doi: 10.1117/12.2219144; https://doi.org/10.1117/12.2219144
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