15 March 2016 Source mask optimization study based on latest Nikon immersion scanner
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The 2x nm logic foundry node has many challenges since critical levels are pushed close to the limits of low k1 ArF water immersion lithography. For these levels, improvements in lithographic performance can translate to decreased rework and increased yield. Source Mask Optimization (SMO) is one such route to realize these image fidelity improvements. During SMO, critical layout constructs are intensively optimized in both the mask and source domain, resulting in a solution for maximum lithographic entitlement. From the hardware side, advances in source technology have enabled free-form illumination. The approach allows highly customized illumination, enabling the practical application of SMO sources. The customized illumination sources can be adjusted for maximum versatility. In this paper, we present a study on a critical layer of an advanced foundry logic node using the latest ILT based SMO software, paired with state-of-the-art scanner hardware and intelligent illuminator. Performance of the layer's existing POR source is compared with the ideal SMO result and the installed source as realized on the intelligent illuminator of an NSR-S630D scanner. Both simulation and on-silicon measurements are used to confirm that the performance of the studied layer meets established specifications.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Zhu, Jun Zhu, Fang Wei, Fang Wei, Lijun Chen, Lijun Chen, Chenming Zhang, Chenming Zhang, Wei Zhang, Wei Zhang, Hisashi Nishinaga, Hisashi Nishinaga, Omar El-Sewefy, Omar El-Sewefy, Gen-Sheng Gao, Gen-Sheng Gao, Neal Lafferty, Neal Lafferty, Jason Meiring, Jason Meiring, Recoo Zhang, Recoo Zhang, Cynthia Zhu, Cynthia Zhu, } "Source mask optimization study based on latest Nikon immersion scanner", Proc. SPIE 9780, Optical Microlithography XXIX, 97801P (15 March 2016); doi: 10.1117/12.2223576; https://doi.org/10.1117/12.2223576

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