16 March 2016 Integrated routing and fill for self-aligned double patterning (SADP) using grid-based design
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Abstract
Self-aligned double patterning (SADP) has been proposed as an alternative patterning solution for sub-10nm technology because of delay of advanced lithography beyond 193nm ArF. In conventional SADP, line and space style of dummy metal fills are inserted once main design is complete. A large buffer distance is required around the main design because no further verification of main design (in presence of fills) is performed. This causes irregular pattern density, which becomes a source of process variations. We propose integrated-fill, in which main design and dummy fill insertion are performed together. This requires a change in overall design flow, which we discuss. Integrated-fill is demonstrated in M2 layer of SADP process; M2 density increases by 15.7% with 2.3% reduction in standard deviation of density distribution; metal thickness variation is also reduced by 24%. More dummy fills cause increased coupling capacitance, which however is shown to be insignificant.
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Youngsoo Song, Youngsoo Song, Jeemyung Lee, Jeemyung Lee, Seongmin Lee, Seongmin Lee, Youngsoo Shin, Youngsoo Shin, "Integrated routing and fill for self-aligned double patterning (SADP) using grid-based design", Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 978105 (16 March 2016); doi: 10.1117/12.2219142; https://doi.org/10.1117/12.2219142
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