Interconnect corners should accurately reflect the effect of misalingment in LELE double patterning process. Misalignment is usually considered separately from interconnect structure variations; this incurs too much pessimism and fails to reflect a large increase in total capacitance for asymmetric interconnect structure. We model interconnect corners by taking account of misalignment in conjunction with interconnect structure variations; we also characterize misalignment effect more accurately by handling metal pitch at both sides of a target metal independently. Identifying metal space at both sides of a target metal.
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Daijoon Hyun, Youngsoo Shin, "Modeling interconnect corners under double patterning misalignment," Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 97810F (16 March 2016);