16 March 2016 Modeling interconnect corners under double patterning misalignment
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Publisher’s Note: This paper, originally published on March 16th, was replaced with a corrected/revised version on March 28th. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance.

Interconnect corners should accurately reflect the effect of misalingment in LELE double patterning process. Misalignment is usually considered separately from interconnect structure variations; this incurs too much pessimism and fails to reflect a large increase in total capacitance for asymmetric interconnect structure. We model interconnect corners by taking account of misalignment in conjunction with interconnect structure variations; we also characterize misalignment effect more accurately by handling metal pitch at both sides of a target metal independently. Identifying metal space at both sides of a target metal.
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Daijoon Hyun, Daijoon Hyun, Youngsoo Shin, Youngsoo Shin, "Modeling interconnect corners under double patterning misalignment", Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 97810F (16 March 2016); doi: 10.1117/12.2219150; https://doi.org/10.1117/12.2219150

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