16 March 2016 Model-based CMP aware RC extraction of interconnects in 16nm designs
Author Affiliations +
Traditional RC extraction flows mostly consider interconnect thickness variations caused by etch and CMP processes in a way of rule-based approach where a form of tables or polynomials is used. While such rulebased approaches are easily incorporated into design flows, they are not inevitably accurate since tablelook- ups in rules are inherently taking simple (mostly one dimensional) typed patterns. Moreover, rules fail to account for the length scale and cumulative effects in both etch and CMP, thereby making them less accurate compared to physics-based models. In this paper, we introduce a model-based CMP aware RC extraction flow that uses the results of thickness simulations from Cadence CMP modeling tools. We apply the proposed model-based CMP aware RC extraction flow to several blocks in a 16 nm design, and compare the results of the proposed model-based flow with those of a traditional rule-based RC extraction flow. This paper also notes that running the model-based flow in conjunction with the traditional rule-based flow should cover the full range of RC variation along critical nets, and ensure faster timing closure.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongchan Ban, Yongchan Ban, Sang Min Han, Sang Min Han, Eunjoo Choi, Eunjoo Choi, Tamba Gbondo-Tugbawa, Tamba Gbondo-Tugbawa, Kuang Han Chen, Kuang Han Chen, "Model-based CMP aware RC extraction of interconnects in 16nm designs", Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 97810G (16 March 2016); doi: 10.1117/12.2219118; https://doi.org/10.1117/12.2219118

Back to Top