Layout decomposition and synthesis for a modular technology to solve the edge-placement challenges by combining selective etching, direct stitching, and alternating-material self-aligned multiple patterning processes

Hongyi Liu; Ting Han; Jun Zhou; Yijian Chen

doi:10.1117/12.2219082

16 March 2016 Layout decomposition and synthesis for a modular technology to solve the edge-placement challenges by combining selective etching, direct stitching, and alternating-material self-aligned multiple patterning processes

Hongyi Liu, Ting Han, Jun Zhou, Yijian Chen

Author Affiliations +

Proceedings Volume 9781, Design-Process-Technology Co-optimization for Manufacturability X; 97810P (2016) https://doi.org/10.1117/12.2219082
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

To overcome the prohibitive barriers of edge-placement errors (EPE) in the cut/block/via step of complementary lithography, we propose a modular patterning approach by combining layout stitching, selective etching, and alternating-material self-aligned multiple patterning (altSAMP) processes. In this patterning approach, altSAMP is used to create line arrays with two materials alternatively which allow a highly selective etching process to remove one material without attacking the other, therefore more significant EPE effect can be tolerated in line-cutting step. With no need of connecting vias, the stitching process can form 2-D features by directly stitching two components of patterns together to create 2-D design freedom as well as multiple-CD/pitch capability. By adopting this novel approach, we can potentially achieve higher processing yield and more 2-D design freedom for continuous IC scaling down to 5 nm. We developed layout decomposition and synthesis algorithms for critical layers, and the fin/gate/metal layer from NSCU open cell library is used to test the proposed algorithms.

Citation Download Citation

Hongyi Liu, Ting Han, Jun Zhou, and Yijian Chen "Layout decomposition and synthesis for a modular technology to solve the edge-placement challenges by combining selective etching, direct stitching, and alternating-material self-aligned multiple patterning processes", Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 97810P (16 March 2016); https://doi.org/10.1117/12.2219082

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