16 March 2016 Layout decomposition and synthesis for a modular technology to solve the edge-placement challenges by combining selective etching, direct stitching, and alternating-material self-aligned multiple patterning processes
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Abstract
To overcome the prohibitive barriers of edge-placement errors (EPE) in the cut/block/via step of complementary lithography, we propose a modular patterning approach by combining layout stitching, selective etching, and alternating-material self-aligned multiple patterning (altSAMP) processes. In this patterning approach, altSAMP is used to create line arrays with two materials alternatively which allow a highly selective etching process to remove one material without attacking the other, therefore more significant EPE effect can be tolerated in line-cutting step. With no need of connecting vias, the stitching process can form 2-D features by directly stitching two components of patterns together to create 2-D design freedom as well as multiple-CD/pitch capability. By adopting this novel approach, we can potentially achieve higher processing yield and more 2-D design freedom for continuous IC scaling down to 5 nm. We developed layout decomposition and synthesis algorithms for critical layers, and the fin/gate/metal layer from NSCU open cell library is used to test the proposed algorithms.
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Hongyi Liu, Hongyi Liu, Ting Han, Ting Han, Jun Zhou, Jun Zhou, Yijian Chen, Yijian Chen, "Layout decomposition and synthesis for a modular technology to solve the edge-placement challenges by combining selective etching, direct stitching, and alternating-material self-aligned multiple patterning processes", Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 97810P (16 March 2016); doi: 10.1117/12.2219082; https://doi.org/10.1117/12.2219082
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