28 March 2016 Metal stack optimization for low-power and high-density for N7-N5
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Abstract
One of the key challenges while scaling logic down to N7 and N5 is the requirement of self-aligned multiple patterning for the metal stack. This comes with a large cost of the backend cost and therefore a careful stack optimization is required. Various layers in the stack have different purposes and therefore their choice of pitch and number of layers is critical. Furthermore, when in ultra scaled dimensions of N7 or N5, the number of patterning options are also much larger ranging from multiple LE, EUV to SADP/SAQP. The right choice of these are also needed patterning techniques that use a full grating of wires like SADP/SAQP techniques introduce high level of metal dummies into the design. This implies a large capacitance penalty to the design therefore having large performance and power penalties. This is often mitigated with extra masking strategies. This paper discusses a holistic view of metal stack optimization from standard cell level all the way to routing and the corresponding trade-off that exist for this space.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Raghavan, F. Firouzi, L. Matti, P. Debacker, R. Baert, S. M. Y. Sherazi, D. Trivkovic, V. Gerousis, M. Dusa, J. Ryckaert, Z. Tokei, D. Verkest, G. McIntyre, K. Ronse, "Metal stack optimization for low-power and high-density for N7-N5", Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 97810Q (28 March 2016); doi: 10.1117/12.2238928; https://doi.org/10.1117/12.2238928
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