16 March 2016 The new analysis method of PWQ in the DRAM pattern
Author Affiliations +
Abstract
In a sub 2Xnm node process, the feedback of pattern weak points is more and more significant. Therefore, it is very important to extract the systemic defect in Double Patterning Technology(DPT), however, it is impossible to predict exact systemic defect at the recent photo simulation tool.[1] Therefore, the method of Process Window Qualification (PWQ) is very serious and essential these days.

Conventional PWQ methods are die to die image comparison by using an e-beam or bright field machine. Results are evaluated by the person, who reviews the images, in some cases. However, conventional die to die comparison method has critical problem. If reference die and comparison die have same problem, such as both of dies have pattern problems, the issue patterns are not detected by current defect detecting approach. Aside from the inspection accuracy, reviewing the wafer requires much effort and time to justify the genuine issue patterns. Therefore, our company adopts die to data based matching PWQ method that is using NGR machine. The main features of the NGR are as follows. First, die to data based matching, second High speed, finally massive data were used for evaluation of pattern inspection.[2] Even though our die to data based matching PWQ method measures the mass data, our margin decision process is based on image shape. Therefore, it has some significant problems.

First, because of the long analysis time, the developing period of new device is increased. Moreover, because of the limitation of resources, it may not examine the full chip area. Consequently, the result of PWQ weak points cannot represent the all the possible defects. Finally, since the PWQ margin is not decided by the mathematical value, to make the solid definition of killing defect is impossible.

To overcome these problems, we introduce a statistical values base process window qualification method that increases the accuracy of process margin and reduces the review time. Therefore, it is possible to see the genuine margin of the critical pattern issue which we cannot see on our conventional PWQ inspection; hence we can enhance the accuracy of PWQ margin.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daehan Han, Daehan Han, Jinman Chang, Jinman Chang, Taeheon Kim, Taeheon Kim, Kyusun Lee, Kyusun Lee, Yonghyeon Kim, Yonghyeon Kim, Jinyoung Kang, Jinyoung Kang, Aeran Hong, Aeran Hong, Bumjin Choi, Bumjin Choi, Joosung Lee, Joosung Lee, Hyoung Jun Kim, Hyoung Jun Kim, Kweonjae Lee, Kweonjae Lee, Hyoungsun Hong, Hyoungsun Hong, Gyoyoung Jin, Gyoyoung Jin, "The new analysis method of PWQ in the DRAM pattern", Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 97810R (16 March 2016); doi: 10.1117/12.2218414; https://doi.org/10.1117/12.2218414
PROCEEDINGS
8 PAGES


SHARE
Back to Top