Proceedings Volume 9782 is from: Logo
21-25 February 2016
San Jose, California, United States
Front Matter: Volume 9782
Proc. SPIE 9782, Front Matter: Volume 9782, 978201 (21 March 2016); doi: 10.1117/12.2239794
Nanopatterning for Advanced Logic and Memory Technology Nodes
Proc. SPIE 9782, Patterning challenges in advanced device architectures: FinFETs to nanowires, 978209 (23 March 2016); doi: 10.1117/12.2220605
Proc. SPIE 9782, Plasma etch patterning of EUV lithography: balancing roughness and selectivity trade off, 97820B (23 March 2016); doi: 10.1117/12.2216840
Proc. SPIE 9782, Plasma etching processes for the integration of InP based compounds on 200mm Si wafer for photonic applications, 97820C (23 March 2016); doi: 10.1117/12.2221903
Patterning Integration Schemes (multilayer, patterning, self-aligned patterning, etc.)
Proc. SPIE 9782, Optical metrology for advanced process control: full module metrology solutions, 97820E (23 March 2016); doi: 10.1117/12.2219919
Proc. SPIE 9782, Self-aligned quadruple patterning integration using spacer on spacer pitch splitting at the resist level for sub-32nm pitch applications, 97820F (1 April 2016); doi: 10.1117/12.2219321
Proc. SPIE 9782, PMMA removal selectivity to PS using dry etch approach: sub-10nm patterning application, 97820G (23 March 2016); doi: 10.1117/12.2220586
Patterning Materials and Etch: Joint Session with Conferences 9779 and 9782
Proc. SPIE 9782, Evaluation of ALE processes for patterning, 97820H (23 March 2016); doi: 10.1117/12.2219280
Proc. SPIE 9782, Edge roughness characterization of advanced patterning processes using power spectral density analysis (PSD), 97820I (28 March 2016); doi: 10.1117/12.2220814
Emerging Patterning Technologies (DSA, and other)
Proc. SPIE 9782, Atomic precision etch using a low-electron temperature plasma, 97820J (23 March 2016); doi: 10.1117/12.2222309
Proc. SPIE 9782, Interactions between plasma and block copolymers used in directed self-assembly patterning, 97820K (23 March 2016); doi: 10.1117/12.2220305
Proc. SPIE 9782, 450mm etch process development and process chamber evaluation using 193i DSA guided pattern, 97820M (23 March 2016); doi: 10.1117/12.2218537
Interactive Poster Session
Proc. SPIE 9782, Predicting LER and LWR in SAQP with 3D virtual fabrication, 97820N (23 March 2016); doi: 10.1117/12.2218929
Proc. SPIE 9782, Etch proximity correction through machine-learning-driven etch bias model, 97820O (23 March 2016); doi: 10.1117/12.2219057
Proc. SPIE 9782, Reactive ion etching challenges for half-pitch sub-10-nm line-and-space pattern fabrication using directed self-assembly lithography, 97820P (23 March 2016); doi: 10.1117/12.2219081
Proc. SPIE 9782, LER improvement for sub-32nm pitch self-aligned quadruple patterning (SAQP) at back end of line (BEOL), 97820Q (24 March 2016); doi: 10.1117/12.2219259
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