28 March 2016 Edge roughness characterization of advanced patterning processes using power spectral density analysis (PSD)
Author Affiliations +
Abstract
Self-Aligned Quadruple Patterning (SAQP) is targeted to support the sub 10nm technology nodes. It is consisted of several process steps starting with lithography and Etch to define the pattern backbone. Followed by additional set of processes based on thin-films deposition and etch that quadruple the number of patterns, shrinking pattern and pitch sizes.

Pattern roughness is derived from the physical and chemical characteristics of these process steps. It is changing with each of the SAQP process steps, based on material stack and the etch process characteristics. Relative to a sub 10 nm pattern sizes pattern, edge roughness can significantly impact pattern physical dimensions. Unless controlled it can increase the variability of device electrical performance, and reduce yield.

In this paper we present the SAQP process steps and roughness characterization, performed with Power Spectral Density (PSD) methodology. Experimental results demonstrates the ability of PSD analysis to sensitively reflect detailed characterization of process roughness, guiding process development improvements, and enabling roughness monitoring for production.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shimon Levi, Shimon Levi, Ishai Schwarzband, Ishai Schwarzband, Roman Kris, Roman Kris, Ofer Adan, Ofer Adan, Elly Shi, Elly Shi, Ying Zhang, Ying Zhang, Kevin Zhou, Kevin Zhou, } "Edge roughness characterization of advanced patterning processes using power spectral density analysis (PSD)", Proc. SPIE 9782, Advanced Etch Technology for Nanopatterning V, 97820I (28 March 2016); doi: 10.1117/12.2220814; https://doi.org/10.1117/12.2220814
PROCEEDINGS
9 PAGES


SHARE
Back to Top