450mm etch process development and process chamber evaluation using 193i DSA guided pattern

Wenli Collison; Yii-Cheng Lin; Shannon Dunn; Hiroaki Takikawa; James Paris; Lucy Chen; Troy Detrick; Jun Belen; George Stojakovic; Michael Goss; Norman Fish; Minjoon Park; Chih-Ming Sun; Mark Kelling; Pinyen Lin

doi:10.1117/12.2218537

23 March 2016 450mm etch process development and process chamber evaluation using 193i DSA guided pattern

Wenli Collison, Yii-Cheng Lin, Shannon Dunn, Hiroaki Takikawa, James Paris, Lucy Chen, Troy Detrick, Jun Belen, George Stojakovic, Michael Goss, Norman Fish, Minjoon Park, Chih-Ming Sun, Mark Kelling, Pinyen Lin

Author Affiliations +

Proceedings Volume 9782, Advanced Etch Technology for Nanopatterning V; 97820M (2016) https://doi.org/10.1117/12.2218537
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

In the Global 450mm Equipment Development Consortium (G450C), a 193i guided directed self-assembly (DSA) pattern has been used to create structures at the 14nm node and below. The first guided DSA patterned wafer was ready for etch process development within a month of the G450C’s first 193i patterned wafer availability with one litho pass. Etch processes were scaled up from 300mm to 450mm for a 28nm pitch STI stack and a 40nm pitch M1 BEOL stack. The effects of various process parameters were investigated to fine tune each process. Overall process window has been checked and compared. Excellent process stability results were shown for current etch chambers.

Citation Download Citation

Wenli Collison, Yii-Cheng Lin, Shannon Dunn, Hiroaki Takikawa, James Paris, Lucy Chen, Troy Detrick, Jun Belen, George Stojakovic, Michael Goss, Norman Fish, Minjoon Park, Chih-Ming Sun, Mark Kelling, and Pinyen Lin "450mm etch process development and process chamber evaluation using 193i DSA guided pattern", Proc. SPIE 9782, Advanced Etch Technology for Nanopatterning V, 97820M (23 March 2016); https://doi.org/10.1117/12.2218537

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