23 March 2016 450mm etch process development and process chamber evaluation using 193i DSA guided pattern
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Abstract
In the Global 450mm Equipment Development Consortium (G450C), a 193i guided directed self-assembly (DSA) pattern has been used to create structures at the 14nm node and below. The first guided DSA patterned wafer was ready for etch process development within a month of the G450C’s first 193i patterned wafer availability with one litho pass. Etch processes were scaled up from 300mm to 450mm for a 28nm pitch STI stack and a 40nm pitch M1 BEOL stack. The effects of various process parameters were investigated to fine tune each process. Overall process window has been checked and compared. Excellent process stability results were shown for current etch chambers.
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Wenli Collison, Wenli Collison, Yii-Cheng Lin, Yii-Cheng Lin, Shannon Dunn, Shannon Dunn, Hiroaki Takikawa, Hiroaki Takikawa, James Paris, James Paris, Lucy Chen, Lucy Chen, Troy Detrick, Troy Detrick, Jun Belen, Jun Belen, George Stojakovic, George Stojakovic, Michael Goss, Michael Goss, Norman Fish, Norman Fish, Minjoon Park, Minjoon Park, Chih-Ming Sun, Chih-Ming Sun, Mark Kelling, Mark Kelling, Pinyen Lin, Pinyen Lin, "450mm etch process development and process chamber evaluation using 193i DSA guided pattern", Proc. SPIE 9782, Advanced Etch Technology for Nanopatterning V, 97820M (23 March 2016); doi: 10.1117/12.2218537; https://doi.org/10.1117/12.2218537
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