23 March 2016 Predicting LER and LWR in SAQP with 3D virtual fabrication
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Abstract
For the first time, process impact on line-edge roughness (LER) and line-width roughness (LWR) in a back-end-of-line (BEOL) self-aligned quadruple patterning (SAQP) flow has been systematically investigated through predictive 3D virtual fabrication. This frequency dependent LER study shows that both deposition and etching effectively reduce high frequency LER, while deposition is much more effective in reducing low frequency LER. Spacer-assisted patterning technology reduces LWR significantly by creating correlated edges, and further LWR improvement can be achieved by optimizing individual process effects on LER. Our study provides a guideline for the understanding and optimization of LER and LWR in advanced technology nodes.
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Jiangjiang (Jimmy) Gu, Jiangjiang (Jimmy) Gu, Dalong Zhao, Dalong Zhao, Vasanth Allampalli, Vasanth Allampalli, Daniel Faken, Daniel Faken, Ken Greiner, Ken Greiner, David M. Fried, David M. Fried, "Predicting LER and LWR in SAQP with 3D virtual fabrication", Proc. SPIE 9782, Advanced Etch Technology for Nanopatterning V, 97820N (23 March 2016); doi: 10.1117/12.2218929; https://doi.org/10.1117/12.2218929
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