23 March 2016 Etch proximity correction through machine-learning-driven etch bias model
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Abstract
Accurate prediction of etch bias has become more important as technology node shrinks. A simulation is not feasible solution in full chip level due to excessive runtime, so etch proximity correction (EPC) often relies on empirically obtained rules or models. However, simple rules alone cannot accurately correct various pattern shapes, and a few empirical parameters in model-based EPC is still not enough to achieve satisfactory OCV. We propose a new approach of etch bias modeling through machine learning (ML) technique. A segment of interest (and its surroundings) are characterized by some geometric and optical parameters, which are received by an artificial neural network (ANN), which then outputs predicted etch bias of the segment. The ANN is used as our etch bias model for new EPC, which we propose in this paper. The new etch bias model and EPC are implemented in commercial OPC tool and demonstrated using 20nm technology DRAM gate layer.
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Seongbo Shim, Seongbo Shim, Youngsoo Shin, Youngsoo Shin, "Etch proximity correction through machine-learning-driven etch bias model", Proc. SPIE 9782, Advanced Etch Technology for Nanopatterning V, 97820O (23 March 2016); doi: 10.1117/12.2219057; https://doi.org/10.1117/12.2219057
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