5 November 2015 Study of carrier lifetime of silicon by OPTP method
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Proceedings Volume 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015; 97950Q (2015) https://doi.org/10.1117/12.2211296
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held June-July 2015, 2015, Hefei, Suzhou, and Harbin, China
Abstract
To analyze the carrier lifetime of Si, a 0.4 mm thickness high-resistivity silicon had been investigated by the optical-pump-terahertz-probe (OPTP) system. The terahertz time domain curve and frequency spectrum (bandwidth of > 6THz) of Si are achieved by the time domain spectroscopy mode, and its characteristic parameters, including refractive index and absorption coefficient, were obtained. And the carrier lifetime of Si was measured by the OPTP mode, the result is about 905 ps.
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Lei Hou, Lei Hou, Xianjin Shao, Xianjin Shao, Lei Yang, Lei Yang, Zhiquan Wang, Zhiquan Wang, Like Zhang, Like Zhang, Mengmeng Zhao, Mengmeng Zhao, Wei Shi, Wei Shi, } "Study of carrier lifetime of silicon by OPTP method", Proc. SPIE 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015, 97950Q (5 November 2015); doi: 10.1117/12.2211296; https://doi.org/10.1117/12.2211296
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