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5 November 2015 Research on the breakdown mechanism of photoconductive antenna
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Proceedings Volume 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015; 97950T (2015) https://doi.org/10.1117/12.2211840
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held June-July 2015, 2015, Hefei, Suzhou, and Harbin, China
Abstract
Terahertz (Thz) photoconductive antenna is one of the most common devices for the generation of terahertz wave. Basing on the theory of current instantaneous impact model, the most effective way of improving the THZ wave power is to increase bias voltage and laser power, but the damage and the breakdown of photoconductive antenna is easy to occur when the bias voltage increases. In this paper, the physical breakdown mechanism of the antenna is researched on the different trigger positions and the different bias voltages. Trigger position is more likely to be breakdown because of the local high electric field stimulated by photon-generated carriers. Increasing bias voltage not only caused the current increasing quickly, but also ablated thermal breakdown of antenna electrode and resulted in antenna failure.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheng Ma, Song Zhang, Hangjuan Jia, Yu Ji, and Wei Shi "Research on the breakdown mechanism of photoconductive antenna", Proc. SPIE 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015, 97950T (5 November 2015); https://doi.org/10.1117/12.2211840
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