You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
5 November 2015Research on the breakdown mechanism of photoconductive antenna
Terahertz (Thz) photoconductive antenna is one of the most common devices for the generation of terahertz wave. Basing on the theory of current instantaneous impact model, the most effective way of improving the THZ wave power is to increase bias voltage and laser power, but the damage and the breakdown of photoconductive antenna is easy to occur when the bias voltage increases. In this paper, the physical breakdown mechanism of the antenna is researched on the different trigger positions and the different bias voltages. Trigger position is more likely to be breakdown because of the local high electric field stimulated by photon-generated carriers. Increasing bias voltage not only caused the current increasing quickly, but also ablated thermal breakdown of antenna electrode and resulted in antenna failure.
The alert did not successfully save. Please try again later.
Cheng Ma, Song Zhang, Hangjuan Jia, Yu Ji, Wei Shi, "Research on the breakdown mechanism of photoconductive antenna," Proc. SPIE 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015, 97950T (5 November 2015); https://doi.org/10.1117/12.2211840