5 November 2015 Recent advances in telecommunication avalanche photodiodes with nano-sized multiplication region
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Proceedings Volume 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015; 97952G (2015) https://doi.org/10.1117/12.2217554
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held June-July 2015, 2015, Hefei, Suzhou, and Harbin, China
Abstract
This paper reviews the recent advances in telecommunication avalanche photodiodes with nano-sized multiplication region. A new low noise avalanche photodiode based on InP traditional material has been proposed for high speed optical communication.
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Yanli Zhao, Shibo Zhang, Suxiang He, "Recent advances in telecommunication avalanche photodiodes with nano-sized multiplication region", Proc. SPIE 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015, 97952G (5 November 2015); doi: 10.1117/12.2217554; https://doi.org/10.1117/12.2217554
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