5 November 2015 Lifetime of photo-excited carriers in GaAs studied with optical-pump terahertz-probe method
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Proceedings Volume 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015; 979538 (2015) https://doi.org/10.1117/12.2210956
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held June-July 2015, 2015, Hefei, Suzhou, and Harbin, China
Abstract
The ultrafast photoconductive characteristics of GaAs were investigated by the optical-pump terahertz-probe (OPTP) method at room temperature. In our experiment, a significant decrease of the terahertz transmittance has been observed when the time delay between the optical pump pulse and the terahertz probe pulse was adjusted. When the optical excitation occurred on the surface of GaAs, the free carriers increase. Results regressed the experimental curve and obtained the carrier lifetime is 681ps.
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Lei Hou, Lei Hou, Lei Yang, Lei Yang, Xianjin Shao, Xianjin Shao, Zhiquan Wang, Zhiquan Wang, Mengmeng Zhao, Mengmeng Zhao, Wei Shi, Wei Shi, } "Lifetime of photo-excited carriers in GaAs studied with optical-pump terahertz-probe method", Proc. SPIE 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015, 979538 (5 November 2015); doi: 10.1117/12.2210956; https://doi.org/10.1117/12.2210956
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