Influence of deposition parameters on residual stress of YbF3 thin film

Yao-ping Zhang; Jun-qi Fan; Guo-yun Long

doi:10.1117/12.2228239

26 January 2016 Influence of deposition parameters on residual stress of YbF₃ thin film

Yao-ping Zhang, Jun-qi Fan, Guo-yun Long

Author Affiliations +

Proceedings Volume 9796, Selected Papers of the Photoelectronic Technology Committee Conferences held November 2015; 97960N (2016) https://doi.org/10.1117/12.2228239
Event: Selected Proceedings of the Chinese Society for Optical Engineering Conferences held November 2015, 2015, Various, China

Abstract

YbF₃ was proposed as a substitute for ThF₄ in anti-reflection or reflection coatings for the infrared range, and the residual stress of YbF₃ thin film using APS plasma ion assisted deposition(PIAD) was studied. From the results, we found the anode voltage of PIAD has a large effect on the residual stress of YbF₃ thin film, and the refractive index of YbF₃ produced with PIAD was higher than without it, with a possible reason close to packing density. Finally, we produced multi-layer reflection coating on a 260mm diameter mono-crystalline silicon substrate. Its surface contour was approximately 0.240λ (λ＝632.8nm), and the absorption was lower than 200ppm, which can satisfy the practical requirement.

Citation Download Citation

Yao-ping Zhang, Jun-qi Fan, and Guo-yun Long "Influence of deposition parameters on residual stress of YbF₃ thin film", Proc. SPIE 9796, Selected Papers of the Photoelectronic Technology Committee Conferences held November 2015, 97960N (26 January 2016); https://doi.org/10.1117/12.2228239

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