26 January 2016 Influence of deposition parameters on residual stress of YbF3 thin film
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Proceedings Volume 9796, Selected Papers of the Photoelectronic Technology Committee Conferences held November 2015; 97960N (2016) https://doi.org/10.1117/12.2228239
Event: Selected Proceedings of the Chinese Society for Optical Engineering Conferences held November 2015, 2015, Various, China
Abstract
YbF3 was proposed as a substitute for ThF4 in anti-reflection or reflection coatings for the infrared range, and the residual stress of YbF3 thin film using APS plasma ion assisted deposition(PIAD) was studied. From the results, we found the anode voltage of PIAD has a large effect on the residual stress of YbF3 thin film, and the refractive index of YbF3 produced with PIAD was higher than without it, with a possible reason close to packing density. Finally, we produced multi-layer reflection coating on a 260mm diameter mono-crystalline silicon substrate. Its surface contour was approximately 0.240λ (λ=632.8nm), and the absorption was lower than 200ppm, which can satisfy the practical requirement.
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Yao-ping Zhang, Yao-ping Zhang, Jun-qi Fan, Jun-qi Fan, Guo-yun Long, Guo-yun Long, "Influence of deposition parameters on residual stress of YbF3 thin film", Proc. SPIE 9796, Selected Papers of the Photoelectronic Technology Committee Conferences held November 2015, 97960N (26 January 2016); doi: 10.1117/12.2228239; https://doi.org/10.1117/12.2228239
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