26 January 2016 Hexagonal GaN films with micron thickness fabricated by nitridation of Mg doped β-Ga2O3 crystals
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Proceedings Volume 9796, Selected Papers of the Photoelectronic Technology Committee Conferences held November 2015; 97960Q (2016) https://doi.org/10.1117/12.2228343
Event: Selected Proceedings of the Chinese Society for Optical Engineering Conferences held November 2015, 2015, Various, China
Abstract
The GaN film with micron thickness was fabricated on the (100) cleavage plane of β-Ga2O3 single crystal by nitridation with NH3 gas flow rate of 400 sccm at 950°C for 10h. The GaN film has small cavities, suggesting that the growth mechanism is three dimensional growth mode like Volmer-Weber model. The thickness of GaN film formed by nitridation is about 1.18 μm. There are GaN (002) and (004) diffraction peaks in the XRD spectra, indicating that the epilayer has a strong c-axis preferred orientation. The photoluminescence spectra, transmittance spectra and Raman spectra of the GaN film were investigated.
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Xiao-Jun Cui, Liang-Ling Wang, "Hexagonal GaN films with micron thickness fabricated by nitridation of Mg doped β-Ga2O3 crystals", Proc. SPIE 9796, Selected Papers of the Photoelectronic Technology Committee Conferences held November 2015, 97960Q (26 January 2016); doi: 10.1117/12.2228343; https://doi.org/10.1117/12.2228343
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