16 April 2016 Graphene nanoribbon field effect transistor for nanometer-size on-chip temperature sensor
Author Affiliations +
Abstract
Graphene has been extensively investigated as a promising material for various types of high performance sensors due to its large surface-to-volume ratio, remarkably high carrier mobility, high carrier density, high thermal conductivity, extremely high mechanical strength and high signal-to-noise ratio. The power density and the corresponding die temperature can be tremendously high in scaled emerging technology designs, urging the on-chip sensing and controlling of the generated heat in nanometer dimensions. In this paper, we have explored the feasibility of a thin oxide graphene nanoribbon (GNR) as nanometer-size temperature sensor for detecting local on-chip temperature at scaled bias voltages of emerging technology. We have introduced an analytical model for GNR FET for 22nm technology node, which incorporates both thermionic emission of high-energy carriers and band-to-band-tunneling (BTBT) of carriers from drain to channel regions together with different scattering mechanisms due to intrinsic acoustic phonons and optical phonons and line-edge roughness in narrow GNRs. The temperature coefficient of resistivity (TCR) of GNR FET-based temperature sensor shows approximately an order of magnitude higher TCR than large-area graphene FET temperature sensor by accurately choosing of GNR width and bias condition for a temperature set point. At gate bias VGS = 0.55 V, TCR maximizes at room temperature to 2.1×10−2 /K, which is also independent of GNR width, allowing the design of width-free GNR FET for room temperature sensing applications.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yaser M. Banadaki, Yaser M. Banadaki, Ashok Srivastava, Ashok Srivastava, Safura Sharifi, Safura Sharifi, "Graphene nanoribbon field effect transistor for nanometer-size on-chip temperature sensor", Proc. SPIE 9802, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2016, 980203 (16 April 2016); doi: 10.1117/12.2219346; https://doi.org/10.1117/12.2219346
PROCEEDINGS
9 PAGES + PRESENTATION

SHARE
Back to Top