Simultaneous sensing of film thickness and temperature using an InSb Hall element

Jun-ichiro Yuji; Tohru Ueda

doi:10.1117/12.2219074

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20 April 2016 Simultaneous sensing of film thickness and temperature using an InSb Hall element

Proceedings Volume 9803, Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2016; 98034B (2016) https://doi.org/10.1117/12.2219074
Event: SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2016, Las Vegas, Nevada, United States

Abstract

This paper describes a unique sensing method to apply an InSb Hall element that enables simultaneous sensing device to detect thickness of insulating film on an iron plate and temperature. We made a trial thickness-temperature sensor consists of an InSb Hall element and a small permanent magnet. Here, the film thickness is detected by the variation in distance between the Hall element with the magnet and the iron plate. The temperature characteristic of an InSb Hall element depends on the drive circuit to generate the Hall voltage. Therefore, the Hall element is driven using a constant voltage source and a constant current source by time-division to obtain two kinds of Hall output voltages. Two output Hall voltages driven by two kinds of bias circuits are measured in the film thickness range from 0 to 500 μm, and for a temperature range of -10 to 70 °C. The inverse response surfaces that are used to identify the thickness of insulating film and temperature are formulated using experimental results. The results obtained show that it is possible to detect film thickness and temperature by obtaining two kinds of Hall voltages.

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Jun-ichiro Yuji and Tohru Ueda "Simultaneous sensing of film thickness and temperature using an InSb Hall element", Proc. SPIE 9803, Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2016, 98034B (20 April 2016); https://doi.org/10.1117/12.2219074

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