In this study, we propose a new multilayer π-type structure sandwiched between an insulating layer using a metal direct bonding technology. By using this technique, significantly lowered layered structure the electrical resistance of the joint portion, because it can be produced by laminating at least one hundred sheets at a time, even when using a metal material having low Seebeck effect, a sufficiently practical level. It can boost the voltage, a possible cost reduction of the device itself. Further, since the laminated π type structure fabricated. Each interface is tightly bonded by eutectic reaction, it is possible to use a structure having a power generation function.
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