30 November 2015 Quality assessment of layer-structured semiconductor single crystals by nuclear quadruple resonance method
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Proceedings Volume 9809, Twelfth International Conference on Correlation Optics; 98090O (2015) https://doi.org/10.1117/12.2220289
Event: 12th International Conference on Correlation Optics, 2015, Chernivsti, Ukraine
Abstract
A method for quality assessment of layer-structured semiconductor single crystals (InSe, GaSe, GaS) grown in evacuated ampoules by the Bridgman technique is proposed. For this purpose, nuclear quadruple resonance method with a consecutive scanning of the entire sample volume and evaluation of crystal perfection by the resulting spectra is used. Effective interaction between high-frequency field and crystal and, accordingly, restriction of scanning area of sample under study is provided with the use of a two-way saddle-shaped coil for a nuclear quadruple resonance spectrometer.
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Andriy Samila, Andriy Samila, Alexander Khandozhko, Alexander Khandozhko, Galina Lastivka, Galina Lastivka, Leonid Politansky, Leonid Politansky, Victor Khandozhko, Victor Khandozhko, "Quality assessment of layer-structured semiconductor single crystals by nuclear quadruple resonance method", Proc. SPIE 9809, Twelfth International Conference on Correlation Optics, 98090O (30 November 2015); doi: 10.1117/12.2220289; https://doi.org/10.1117/12.2220289
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