15 December 2015 Optical rectification and down-conversion of fs pulses into mid-IR and THz range in GaSe1-xSx
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Proceedings Volume 9810, International Conference on Atomic and Molecular Pulsed Lasers XII; 98101P (2015) https://doi.org/10.1117/12.2224703
Event: XII International Conference on Atomic and Molecular Pulsed Lasers, 2015, Tomsk, Russian Federation
Abstract
Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency conversion of fs pulses into 6.5–35 μm and into 0.2–4.5 THz is realized. S-doped crystals demonstrated advantages from 50–70% in the first experiments up to 8.5–15 times in the following experiments depending on experimental conditions.
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Yu. M. Andreev, Yu. M. Andreev, G. V. Lanskii, G. V. Lanskii, K. A. Kokh, K. A. Kokh, V. A. Svetlichnyi, V. A. Svetlichnyi, } "Optical rectification and down-conversion of fs pulses into mid-IR and THz range in GaSe1-xSx", Proc. SPIE 9810, International Conference on Atomic and Molecular Pulsed Lasers XII, 98101P (15 December 2015); doi: 10.1117/12.2224703; https://doi.org/10.1117/12.2224703
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