17 December 2015 Pressure transducer of the on the basis of reactive properties of transistor structure with negative resistance
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Proceedings Volume 9816, Optical Fibers and Their Applications 2015; 98161C (2015) https://doi.org/10.1117/12.2229211
Event: 16th Conference on Optical Fibers and Their Applications, 2015, Lublin and Naleczow, Poland
Abstract
The opportunity of direct transformation of pressure in frequency is shown on the basis of the hybrid integrated circuit consisting of the two-collector pressure sensitive transistor and the field two-gate transistor with an active inductive element on the basis of the bipolar transistor with a phase-shifting RC chain. Analytical dependencies of transformation function and the equation of sensitivity are received. Theoretical and experimental research have shown, that sensitivity of the transducer makes 1,55–1,10kHz/kPa.
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Alexander V. Osadchuk, Alexander V. Osadchuk, Iaroslav A. Osadchuk, Iaroslav A. Osadchuk, Andrzej Smolarz, Andrzej Smolarz, Nazym Kussambayeva, Nazym Kussambayeva, "Pressure transducer of the on the basis of reactive properties of transistor structure with negative resistance", Proc. SPIE 9816, Optical Fibers and Their Applications 2015, 98161C (17 December 2015); doi: 10.1117/12.2229211; https://doi.org/10.1117/12.2229211
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