12 October 2016 N-doped GeTe phase change material for high-temperature data retention and low-power consumption
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Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 981809 (2016) https://doi.org/10.1117/12.2243757
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
The amorphous-to-crystalline transitions of N-doped GeTe films are investigated by in situ film resistance measurements. Both the crystallization temperature and resistance of the N-doped films increase. The analysis of X-ray diffraction (XRD) measurement indicates that the grain size of the films with more nitrogen content can be refined, leading to the improvement in the resistance and thermal stability of the phase change films. The N-doped GeTe films have higher activation energy for crystallization. The 10-year lifetime is raised from 90°C of undoped GeTe film to 138°C of the N-doped GeTe film. The better surface roughness is confirmed by atomic force microscopy. The phase change speed is evaluated by the picosecond laser pump-probe technology.
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Jianhao Zhang, Yifeng Hu, Xiaoqin Zhu, Hua Zou, Li Yuan, Jianzhong Xue, Yongxing Sui, Weihua Wu, Sannian Song, Zhitang Song, "N-doped GeTe phase change material for high-temperature data retention and low-power consumption", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 981809 (12 October 2016); doi: 10.1117/12.2243757; https://doi.org/10.1117/12.2243757
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