12 October 2016 The storage system of PCM based on random access file system
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Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180G (2016) https://doi.org/10.1117/12.2245028
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
Emerging memory technologies such as Phase change memory (PCM) tend to offer fast, random access to persistent storage with better scalability. It’s a hot topic of academic and industrial research to establish PCM in storage hierarchy to narrow the performance gap. However, the existing file systems do not perform well with the emerging PCM storage, which access storage medium via a slow, block-based interface. In this paper, we propose a novel file system, RAFS, to bring about good performance of PCM, which is built in the embedded platform. We attach PCM chips to the memory bus and build RAFS on the physical address space. In the proposed file system, we simplify traditional system architecture to eliminate block-related operations and layers. Furthermore, we adopt memory mapping and bypassed page cache to reduce copy overhead between the process address space and storage device. XIP mechanisms are also supported in RAFS. To the best of our knowledge, we are among the first to implement file system on real PCM chips. We have analyzed and evaluated its performance with IOZONE benchmark tools. Our experimental results show that the RAFS on PCM outperforms Ext4fs on SDRAM with small record lengths. Based on DRAM, RAFS is significantly faster than Ext4fs by 18% to 250%.
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Wenbing Han, Wenbing Han, Xiaogang Chen, Xiaogang Chen, Mi Zhou, Mi Zhou, Shunfen Li, Shunfen Li, Gezi Li, Gezi Li, Zhitang Song, Zhitang Song, } "The storage system of PCM based on random access file system", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180G (12 October 2016); doi: 10.1117/12.2245028; https://doi.org/10.1117/12.2245028
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