Phase Change Memory (PCM) is regarded as one of the most promising candidates for the next-generation nonvolatile memory. Its storage medium, phase change material, has attracted continuous exploration. Sb2Te3 is a high-speed phase change material matrix with low crystallization temperature. Cr-doped Sb2Te3 (CST) films with suitable composition have been studied and proved to be a promising novel phase change material with high speed and good thermal stability. In this paper, detailed Rs-T characteristics and Hall characteristics of the CST films are studied. We find that, when more parts of the film crystallizes into the ordered structure, the activation energy for electrical conduction (Eσ) decreases, indicating that the semiconductor property is weakened. And with the increase of Cr-dopants, Eσ of the As-deposited (As-de) amorphous CST films decreases, thus the thermal stability of resistance is improved. Hall results show that Sb2Te3 and CST films are all in P-type. For As-de amorphous films, with the increase of Cr-dopants, the carrier mobility decreases all along, while the carrier density decreases at first and then increases. For the crystalline films, with the increase of Cr-dopants, the carrier mobility decreases, while the carrier density increases.