12 October 2016 Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory
Author Affiliations +
Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180I (2016) https://doi.org/10.1117/12.2245062
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
The stability of TiN which is the preferred bottom electrode contact (BEC) of phase change memory (PCM) due to its low thermal conductivity and suitable electrical conductivity, is very essential to the reliability of PCM devices. In this work, in order to investigate the effect of high aspect ratio process (HARP) SiO2 on the performance of TiN, both TiN/SiO2, TiN/SiN thin films and TiN BEC device structures are analyzed. By combining transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), we found that the TiN would be oxidized after the deposition of HARP SiO2 and there exist a thin (~4 nm) oxidation interfacial layer between TiN and SiO2. Electrical measurements were performed on the 1R PCM test-key die with 7 nm and 10 nm BEC-only cells. The statistical initial resistances of BEC have wide distribution and it is confirmed that the non-uniform oxidation of TiN BEC affects the astringency of the resistance of TiN BEC. The experimental results help to optimize the process of TiN BEC, and SiN is recommended as a better choice as the linear layer.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan Gao, Dan Gao, Bo Liu, Bo Liu, Zhen Xu, Zhen Xu, Heng Wang, Heng Wang, Yangyang Xia, Yangyang Xia, Lei Wang, Lei Wang, Nanfei Zhu, Nanfei Zhu, Ying Li, Ying Li, Yipeng Zhan, Yipeng Zhan, Zhitang Song, Zhitang Song, Songlin Feng, Songlin Feng, } "Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180I (12 October 2016); doi: 10.1117/12.2245062; https://doi.org/10.1117/12.2245062
PROCEEDINGS
7 PAGES


SHARE
Back to Top