12 October 2016 Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma
Author Affiliations +
Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180M (2016) https://doi.org/10.1117/12.2245726
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
Recently, carbon-doped Ge2Sb2Te5 (CGST) has been proved to be a high promising material for future phase change memory technology. In this article, reactive ion etching (RIE) of phase change material CGST films is studied using CF4/Ar gas mixture. The effects on gas-mixing ratio, RF power, gas pressure on the etch rate, etch profile and roughness of the CGST film are investigated. Conventional phase change material Ge2Sb2Te5 (GST) films are simultaneously studied for comparison. Compared with GST film, 10 % more CF4 is needed for high etch rate and 10% less CF4 for good anisotropy of CGST due to more fluorocarbon polymer deposition during CF4 etching. The trends of etch rates and roughness of CGST with varying RF power and chamber pressure are similar with those of GST. Furthermore, the etch rate of CGST are more easily to be saturated when higher RF power is applied.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lanlan Shen, Lanlan Shen, Sannian Song, Sannian Song, Zhitang Song, Zhitang Song, Le Li, Le Li, Tianqi Guo, Tianqi Guo, Bo Liu, Bo Liu, Liangcai Wu, Liangcai Wu, Yan Cheng, Yan Cheng, Songlin Feng, Songlin Feng, } "Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180M (12 October 2016); doi: 10.1117/12.2245726; https://doi.org/10.1117/12.2245726
PROCEEDINGS
4 PAGES


SHARE
RELATED CONTENT


Back to Top