12 October 2016 Formation of recessed hole by NF3/O2 etching for phase change memory
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Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180O (2016) https://doi.org/10.1117/12.2246305
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
In this work, we discuss about the formation of recessed hole in the manufacturing process of phase change memory (PCM). Three recessed holes with different slope angle and depth were obtained by changing the NF3/O2 gas mixing ratio. The recessed holes upon bottom electrode contact (BEC) were achieved by etch back process after the formation of BEC. The etching process takes advantage of the etch rate of TiN which is faster than that of SiN. With increasing content of O2 gas, the decrease in the etch rate of SiN was larger than that of TiN, and this increases the selectivity of TiN to SiN. Oxidation layer can be found upon the SiN layer in the energy dispersive X-ray (EDX) elemental mapping profile after the recessed etching step. It is the existence of oxidation layer that suppressed the etching of SiN.
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Zhen Xu, Zhen Xu, Bo Liu, Bo Liu, Dan Gao, Dan Gao, Heng Wang, Heng Wang, Yangyang Xia, Yangyang Xia, Zhitang Song, Zhitang Song, Lei Wang, Lei Wang, Yipeng Zhan, Yipeng Zhan, Songlin Feng, Songlin Feng, } "Formation of recessed hole by NF3/O2 etching for phase change memory", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180O (12 October 2016); doi: 10.1117/12.2246305; https://doi.org/10.1117/12.2246305
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