12 October 2016 A cleaning method for reduced graphene oxide by inductively coupled plasma
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Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180P (2016) https://doi.org/10.1117/12.2246592
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
In this work, we make reduced graphene oxide (rGO) solution via chemical way and use it to fabricate Field-effect transistor (FET) channel by spin coating for investigating the performance of grapheme-based devices. An inductively coupled plasma (ICP) with very low plasma density is applied to etch the surface of rGO. It has been confirmed that residues and contaminations can be removed through etching and proper etching parameters can lead to better electrical properties more like the pristine graphene without creating defects. Considering the application of graphene added to silicon-based electronic devices, such a cleaning method can be used due to its advantages of being a low-temperature, large-area, high-throughput, and Si-compatible process.
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Yan Shen, Yan Shen, Peng Zhou, Peng Zhou, David Wei Zhang, David Wei Zhang, } "A cleaning method for reduced graphene oxide by inductively coupled plasma", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180P (12 October 2016); doi: 10.1117/12.2246592; https://doi.org/10.1117/12.2246592
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