12 October 2016 Te-free environmental materials of TixSb2.19Se applied in phase change memory
Author Affiliations +
Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180T (2016) https://doi.org/10.1117/12.2246980
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
Environmental friendly Te-free phase change material of TixSb2.19Se was investigated for PCM application. As the important thermal properties, the crystallization temperature (Tc) and data retention for ten years for the best selected composition Ti0.34Sb2.19Se (TSS) are 234°C and 160‡C, respectively. Detection of the crystal structure of TSS by means of XRD, TEM and XPS reveals that the grains are more uniform compared with Ge2Sb2Te5 (GST). The Set and Reset operation voltages for TSS-based phase change memory devices are much lower than those of conventional GST-based ones. Remarkably, the TSS device exhibits an extremely high phase change speed of 10 ns.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yueqin Zhu, Sannian Song, Le Li, Huaqing Xie, Zhitang Song, Bo Liu, Junxing Wu, "Te-free environmental materials of TixSb2.19Se applied in phase change memory", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180T (12 October 2016); doi: 10.1117/12.2246980; https://doi.org/10.1117/12.2246980
PROCEEDINGS
5 PAGES


SHARE
Back to Top