12 October 2016 Investigation of (SiC)0.85-Sb3Te alloy for high-reliability PCM applications
Author Affiliations +
Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180U (2016) https://doi.org/10.1117/12.2246984
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
The reliability and operation speed have long been two great obstacles in phase change memory technology. Thus (SiC)0.85-Sb3Te alloy was proposed to be a new-type phase change material due to its high crystallization temperature (199.7°C) and good data retention ability (118.9°C for 10-year archival life) in this work. The stress accompanying the phase transition in (SiC)0.85-Sb3Te is smaller than those in pure Sb3Te and the traditional material, Ge2Sb2Te5. This is attributed to the fine crystal grain size due to SiC doping, which contributes to the ultrafast reversible operation (5 ns) and good endurance (2.3 × 104 cycles) of (SiC)0.85-Sb3Te based phase change memory cells.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tianqi Guo, Tianqi Guo, Sannian Song, Sannian Song, Le Li, Le Li, Lanlan Shen, Lanlan Shen, Bo Liu, Bo Liu, Zhitang Song, Zhitang Song, Ming Qi, Ming Qi, Songlin Feng, Songlin Feng, } "Investigation of (SiC)0.85-Sb3Te alloy for high-reliability PCM applications", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180U (12 October 2016); doi: 10.1117/12.2246984; https://doi.org/10.1117/12.2246984
PROCEEDINGS
5 PAGES


SHARE
Back to Top