12 October 2016 N-doped Sn15Sb85 thin films for high speed and high thermal stability phase change memory application
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Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180V (2016) https://doi.org/10.1117/12.2246985
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
The Sn15Sb85 alloy is characterized by its rapid phase transition. However, its poor thermal stability hinders its application as phase change memory material. After nitrogen doping, the crystallization temperature and 10-year data retention temperature of Sn15Sb85 thin films even reach 235‡C and 173°C, respectively. Both the crystallization activation energy and the amorphous resistance of the thin films increase as well. As a result, the material thermal stability is significant improved. The surface roughness of the films is evaluated by atomic force microscope (AFM). The phase change speed of the thin films, measured by the picosecond laser technique, remains fast.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Li Yuan, Li Yuan, Yifeng Hu, Yifeng Hu, Xiaoqin Zhu, Xiaoqin Zhu, Jianhao Zhang, Jianhao Zhang, Hua Zou, Hua Zou, Jianzhong Xue, Jianzhong Xue, Long Zheng, Long Zheng, Weihua Wu, Weihua Wu, Sannian Song, Sannian Song, Zhitang Song, Zhitang Song, } "N-doped Sn15Sb85 thin films for high speed and high thermal stability phase change memory application", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180V (12 October 2016); doi: 10.1117/12.2246985; https://doi.org/10.1117/12.2246985
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