12 October 2016 Comprehensive analysis and optimization of interface in device
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Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 981813 (2016) https://doi.org/10.1117/12.2249001
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
The interface which should correspond to Ohmic contact between the TiN bottom electrode and the TiN adhesive layer is investigated. However, from the measured V-I curve, a non-linear relationship is observed. The previous research and the replotted V-I curve using double-logarithmic scale demonstrate that an oxide layer at the interface is the major reason for the non-linear relationship and that the conduction mechanism here follows the Space-Charge-Limited- Current mechanism. To eliminate the interface effect, a pulse current with a compliance is introduced. A phenomenon is observed that negative resistance occurs because of the capture of filament in the oxide layer. As the width of pulse current increases, the interface effect is eliminated due to the formation of a permanent conducting filament. And , the VI curve shows a linear relationship, representing that the interface corresponds to Ohmic contact and the interface effect has been eliminated efficiently.
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Hongyang Wei, Hongyang Wei, Dao-Lin Cai, Dao-Lin Cai, Yi-Feng Chen, Yi-Feng Chen, Yue-Qing Wang, Yue-Qing Wang, Ru-Ru Huo, Ru-Ru Huo, Yao-Yao Lu, Yao-Yao Lu, Hong-Bo Fang, Hong-Bo Fang, Zhi-Tang Song, Zhi-Tang Song, } "Comprehensive analysis and optimization of interface in device", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 981813 (12 October 2016); doi: 10.1117/12.2249001; https://doi.org/10.1117/12.2249001
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