12 October 2016 Temperature field simulation of phase change material/metal bilayer structure upon femtosecond laser pulse irradiation
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Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 981814 (2016) https://doi.org/10.1117/12.2249262
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
The thermal transmission process induced by single-shot femtosecond laser pulses in Sb70Te30 phase change thin films with or without a Ag thermal-conductive layer was studied numerically with a two-temperature model. The distribution of electron and lattice temperatures was calculated by a one-dimensional finite difference method. The different temperature evolution characteristics on different time scales (from several picoseconds, to tens of picoseconds and to several nanoseconds) are discussed based on the electron-phonon coupling theory. The influence of a special point in the lattice temperature evolution curves on the crystallization time of phase change thin films is analyzed. The results will be helpful to the deeper understanding of the ultrafast phase transition mechanism of phase change memory materials.
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Kai Lei, Kai Lei, Minghui Jiang, Minghui Jiang, Yang Wang, Yang Wang, Yiqun Wu, Yiqun Wu, } "Temperature field simulation of phase change material/metal bilayer structure upon femtosecond laser pulse irradiation", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 981814 (12 October 2016); doi: 10.1117/12.2249262; https://doi.org/10.1117/12.2249262
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