12 October 2016 Femtosecond laser pulse induced phase transition of Cr-doped Sb2Te1 films studied with a pump-probe system
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Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 981815 (2016) https://doi.org/10.1117/12.2249274
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China
Abstract
The Femtosecond laser pulse induced phase transition dynamics of Cr-doped Sb2Te1 films was studied by real-time reflectivity measurements with a pump-probe system. It was found that crystallization of the as-deposited CrxSb2Te1 phase-change thin films exhibits a multi-stage process lasting for about 40ns.The time required for the multi-stage process seems to be not related to the contents of Cr element. The durations of the crystallization and amorphization processes are approximately the same. Doping Cr into Sb2Te1 thin film can improve its photo-thermal stability without obvious change in the crystallization rate. Optical images and image intensity cross sections are used to visualize the transformed regions. This work may provide further insight into the phase-change mechanism of CrxSb2Te1 under extra-non-equilibrium conditions and aid to develop new ultrafast phase-change memory materials.
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Minghui Jiang, Minghui Jiang, Qing Wang, Qing Wang, Kai Lei, Kai Lei, Yang Wang, Yang Wang, Bo Liu, Bo Liu, Zhitang Song, Zhitang Song, } "Femtosecond laser pulse induced phase transition of Cr-doped Sb2Te1 films studied with a pump-probe system", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 981815 (12 October 2016); doi: 10.1117/12.2249274; https://doi.org/10.1117/12.2249274
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